MRF8P20100HR3 MRF8P20100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz and GSM EDGE base station applications with frequencies from
1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular
base station modulation formats.
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Typical Doherty Single--Carrier W--CDMA Performance: VDD
=28Volts,
IDQA
= 400 mA, VGSB
=1.3Vdc,Pout
= 20 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz
16.0
44.3
7.8
--33.5
1880 MHz
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Typical Doherty Single--Carrier W--CDMA Performance: VDD
=28Volts,
IDQA
= 400 mA, VGSB
=1.3Vdc,Pout
= 20 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.2
43.5
7.6
--30.8
1900 MHz
16.1
43.4
7.6
--32.6
1920 MHz
15.8
42.9
7.6
--34.6
GSM EDGE
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Typical GSM EDGE Performance: VDD
=28Volts,IDQA
=IDQB
= 330 mA,
Pout
= 42 Watts Avg.
Frequency
Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz
17.1
43.8
--58.4
--74.4
3.0
1840 MHz
17.3
42.4
--60.0
--75.5
2.6
1880 MHz
17.1
41.7
--60.5
--75.3
2.4
Features
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Production Tested in a Symmetrical Doherty Configuration
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100% PAR Tested for Guaranteed Output Power Capability
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Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
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Internally Matched for Ease of Use
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Integrated ESD Protection
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Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
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Designed for Digital Predistortion Error Correction Systems
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF8P20100H
Rev. 0, 4/2010
Freescale Semiconductor
Technical Data
1805--2025 MHz, 20 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P20100HR3
MRF8P20100HSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20100HSR3
(Top View)
GSA
31RFoutA/VDSA
Figure 1. Pin Connections
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRF8P20100HR3
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Freescale Semiconductor, Inc., 2010.
All rights reserved.
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